Design of a 10 kV and 16.5 GW cm−2 NiO/β-Ga2O3 ...
Figure 1a shows the schematic cross-section of the p-NiO/n-Ga 2 O 3 heterojunction diode with positive bevel angle termination, which consists of n-type Ga 2 O 3 substrate, Ga 2 O 3 drift layer, p-type NiO layer, and SiO 2 passivation layer. The Ga 2 O 3 substrate thickness is 2 μm and the doping concentration is 1 × 10 19 cm −3 to form a cathode …
Design and implementation of a 10 kV/10 kW high
Request PDF | Design and implementation of a 10 kV/10 kW high-frequency center-tapped transformer | High voltage high-frequency (HVHF) transformers have a crucial part in the realization of high ...
Design and Demonstration of a 3.6-kV–120-V/10-kVA Solid-State ...
Request PDF | Design and Demonstration of a 3.6-kV–120-V/10-kVA Solid-State Transformer for Smart Grid Application | Solid-state transformer (SST) has been regarded as one of the most important ...
Design of a 10-kV·A Soft-Switching Solid-State Transformer (S4T)
The soft-switching solid-state transformer (S4T) employs only 12 main active devices and an auxiliary resonant circuit to implement a bidirectional solid-state transformer, with an attractive feature of achieving a full range of zero-voltage-switching conditions for all the main devices. This paper covers detailed design of the power stage, auxiliary resonant circuit, and …
Design and fabrication of 10-kV silicon-carbide p-channel IGBTs …
Abstract . 10-kV 4H-SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm 2 with a die size of 3 mm×3 mm. A step space modulated junction termination extension (SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs.
Primary design and protection of 110kV substation
Finally, we design a simple relay protection, and complete the design of the primary electrical part of 110kV substation. Short-circuit current calculation results Figures - available via license ...
Design and experimental results of a 10 kV resistance ...
Superconducting fault current limiter (SFCL) can be a solution to limit the high and fast fault current of the voltage source controlled high-voltage DC (VSC-HVDC) transmission system. Resistance-inductance type SFCL has a good limiting current effect that can limit the fault current by resistance and inductance together. In this paper, the broadband dynamic model is …
Design of a novel, high-density, high-speed 10 kV SiC MOSFET …
High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, …
Study on Energy Efficiency Evaluation Model of 110 kV …
450 110 kV 1,1,2,1,3, 3 1, 2, 3 …
Design of a novel, high-density, high-speed 10 kV SiC …
This article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground integrity due to an integrated screen ...
Analysis and Gate Driver Design Considerations of 10 kV SiC …
Abstract: The behavior of 10 kV SiC MOSFETs during a flashover fault condition is investigated comprehensively. A larger turn-off gate resistance R g,off is recommended for 10 kV SiC MOSFETs without Kelvin source to avoid very asymmetrical gate resistance, while a small R g,off is recommended for 10 kV SiC MOSFETs with Kelvin source. Guidelines regarding gate loop …
Research and design of 40.5 kV intelligent and environment …
Since SF6 gas is one of the six greenhouse gases listed by the Kyoto Protocol, an environmentally friendly cubicle gas-insulated switchgear (C-GIS) using N2 as the principal insulation medium was developed. This work investigates N2-insulated C-GIS, an environmentally suitable alternative to SF6. Test and engineering demonstrate a 140 mm minimum insulating …
[PDF] Design and computation of a lightning protection system in …
: A lightning protection system (LPS) of an urban 110 kV substation is designed and analysed according to NFPA 780 and IEC 62305-3 standards. The analysis of the LPS is established on the value of risk assessment. The total area of the plant is described by one soil layer with uniform resistivity. This study aims to improve the understanding of an unexpected …
Design, Verification, and Protection Setting of Superconducting …
In order to clearly explain the difference of the distance protection setting with and without SFCL, a simplified 10 kV network in Fig. 13 is taken as an example. Line1–Line3 are transmission lines, DR1–DR3 are the distance relays, and SC1–SC3 are the SFCLs. The parameters of transmission lines and SFCL in 10 kV network are shown in Table ...
Design and Development of a 10 kV, 60 A SiC MOSFET …
Design and Development of a 10 kV, 60 A SiC MOSFET Module Christina DiMarino 1, Dushan Boroyevich, Rolando Burgos1, Mark Johnson2 1Center for Power Electronics Systems, Virginia Tech, USA 2University of Nottingham, UK Abstract— High-voltage silicon carbide (SiC) transistors have been demonstrated in recent years, and now Cree''s 3rd- generation 10 kV, 350 mΩ SiC …
(PDF) Demonstration of a 10 kV SiC MOSFET based Medium
This paper introduces a holistic and systematic design methodology tailored to the 10 kV silicon carbide (SiC) MOSFET power modules. Multi-objective optimization was achieved with enhanced ...
The Review Points in Preliminary Design of the New …
This article takes the new generation of 110 kv intelligent substation construction as an example, on the site of review points in the preliminary design of civil engineering construction, module structure, drainage design, fire protection design and precautions, in order to be able to control
Design Optimization and Experimental Validation of Gate Driver for 10 ...
Medium voltage silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are advantageous in numerous industrial applications by enabling simple two-level topologies. However, medium voltage SiC MOSFET also challenges the gate driver design from the following three aspects: 1) high voltage isolation requirement for the gate driver power …
Design and Implement of 10 kV SiC JBS Based on Exponential …
Based on the features and challenges of high-voltage SiC termination, this paper proposes an exponentially varying field limiting rings working over 10 kV, which has been optimized by finite element numerical simulation through ring-by-ring adjustment, and verified by fabrication and characterization. In addition, this paper takes the designed and fabricated 10 kV JBS as …
Design of a Novel, High-Density, High-Speed 10 kV SiC
A. Substrate Design In this work, DBA substrates with 1-mm-thick aluminum nitride (AlN) and 0.3-mm-thick aluminum (Al) are used. DBA was selected because it has higher thermal-cycling capability
Design of a novel, high-density, high-speed 10 kV SiC MOSFET …
This article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground integrity due to an integrated screen ...
General design of ±100 kV/1kA energy pipeline for electric power …
General design of ±100 kV/1kA energy pipeline for electric power and LNG transportation. Author links open overlay panel Qingquan Qiu a b, Guomin Zhang a b, Liye Xiao a b, Yuping Teng a b, ... and might be 100 kJ-500 kJ for the 10 kV/1kA dc cable. The pipeline would burst under the combined action of MJ grade arc ablation and shock wave.
Design of a 10 kV SiC MOSFET-based high-density, high …
This article presents the design and testing of a 10-kV SiC mosfet power module that switches at a record 250 V/ns without compromising the signal and ground integrity due to an integrated screen ...